A trap generation closed-form statistical model for intrinsic oxide breakdown - Electron Devices, IEEE Transactions on
نویسندگان
چکیده
A trap generation statistical model with the trap sphere radius as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set.
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